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| BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25C) C Characteristic Collector-Base Voltage Collector-EmitterVoltage Emitter-Base voltage Collector Current (DC) Collector Peck Current Base Current (DC) Collector Dissipation (Tc=25C) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICM IB PC Tj Tstg Rating 400 200 6 7 10 4 60 150 -65~150 Unit V V V A A A W C C ELECTRICAL CHARACTERISTICS (Ta=25C) C Characterristic Collector Cutoff Current (VBE=0) Symbol ICES Test Condition VCE= 400V , VEB= 0 VCE= 250V , VEB= 0 VCE= 250V , VEB= 0 Tc=150 VEB= 6V , IC=0 IC=5A, IB=0.5A IC=5A, IB=0.8A IB=1.2A IC=6A, IC=5A, IB=0.5A IC=5A, IB=0.8A IC=6A, IB=1.2A VCE= 10V , IC=500mA IC=5A, IB=0.5A IC=5A, IB=0.8A IC=6A, IB=1.2A Min Typ Max 5 100 1 1 1 1 1 1.2 1.2 1.5 Unit mA A mA mA V V V V V V Emitter Cutoff Current(IC=0) Collector Emitter Saturation Voltage :BU406 :BU406H :BU408 Base- Emitter Saturation Voltage :BU406 :BU406H :BU408 Current Gain Bandwith Product Turn-Off Time :BU406 :BU406H :BU408 IEBO VCE(sat) VBE(sat) fT toff 10 0.75 0.4 0.4 MHZ S S S Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com |
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